Superdiffusive motion of the Pb wetting layer on the Si(111) surface.
نویسندگان
چکیده
Mass transport in the Pb wetting layer on the Si(111) surface is investigated by observing nonequilibrium coverage profile evolution with low energy electron microscopy and microlow energy electron diffraction. Equilibration of an initial coverage step profile occurs by the exchange of mass between oppositely directed steep coverage gradients that each move with unperturbed shape. The bifurcation of the initial profile, the shape of the profile between the two moving edges, and the time dependence of equilibration are all at odds with expectations for classical diffusion behavior. These observations signal a very unusual coverage dependence of diffusion or may even reveal an exceptional collective superdiffusive mechanism.
منابع مشابه
Alternating layer and island growth of Pb on Si by spontaneous quantum phase separation.
Real-time in situ x-ray studies of continuous Pb deposition on Si(111)-(7x7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer mode upon further deposition. This behavior of...
متن کاملNonclassical "explosive" nucleation in Pb/Si(111) at low temperatures.
Classically, the onset of nucleation is defined in terms of a critical cluster of the condensed phase, which forms from the gradual aggregation of randomly diffusing adatoms. Experiments in Pb/Si(111) at low temperature have discovered a dramatically different type of nucleation, with perfect crystalline islands emerging "explosively" out of the compressed wetting layer after a critical coverag...
متن کاملمحاسبه سطح مشترک (111)Pb/Si با استفاده از نظریه تابعی چگالی
Work function and surface energy per unit area were calculated in the framework of density functional theory (DFT) with Linearized A ug mented Plane Wave Plus Local Orbital method in full potential for a clean symmetric slab of silicon containing two (top and bottom) surfaces. The surfaces were theoretically modeled using supercell technique by stacking a variety of silicon layers along (111)...
متن کاملIn situ ESR observation of interface dangling bond formation processes during ultrathin SiO2 growth on Si(111).
We report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the Pb center density reached around 2.5-3.0 x 10(12) cm(-2), which is the same density as in the case of thick SiO2. This result shows that the Pb center density do...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Physical review letters
دوره 110 3 شماره
صفحات -
تاریخ انتشار 2013